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NTMS10P02R2G - onsemi

Description: SOIC-8 Mounting Information Provided; Logic Level Gate Drive; Higher Efficiency Extending Battery Life; Diode Exhibits High Speed, Soft Recovery; Miniature SO-8 Surface Mount Package; Avalanche Energy Specified; Ultra Low RDS(on)

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NTMS10P02R2G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMS10P02R2G - onsemi  - 3D model - Small Outline Packages - SOIC-8 NB CAST 751-07
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NTMS10P02R2G Details

  • Manufacturer Part Number:

    NTMS10P02R2G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8 Narrow Body

  • Package Description:

    SOIC-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    751-07

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1010 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    380 ns

  • Turn-on Time-Max (ton):

    100 ns

NTMS10P02R2G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for NTMS10P02R2G is a 2x2mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation of NTMS10P02R2G in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal vias, and ensuring good airflow around the device.
  • The maximum allowed voltage on the input pins of NTMS10P02R2G is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, NTMS10P02R2G can be used in a switching regulator application, but it is essential to ensure that the device is properly bypassed and decoupled to minimize voltage transients and ringing.
  • The optimal output capacitor value for NTMS10P02R2G depends on the specific application requirements, including the output voltage, output current, and desired ripple voltage. A general guideline is to use a capacitor with a value between 1uF to 10uF, with a voltage rating of at least 2x the output voltage.

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