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NTMT045N065SC1 - onsemi

Description: Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Max Junction Temperature 175°C; Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); 650V rated; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω

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NTMT045N065SC1 - onsemi PCB footprint - Other - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O
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NTMT045N065SC1 - onsemi  - 3D model - Other - TDFN4 8x8, 2P CASE 520AB ISSUE O
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NTMT045N065SC1 Details

  • Manufacturer Part Number:

    NTMT045N065SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    TDFN4, 6 PIN

  • Manufacturer Package Code:

    520AB

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    72 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    55 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    197 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NTMT045N065SC1 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps between the device and the heat sink.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, store the device in an ESD-safe container, and use ESD-protected equipment during assembly and testing.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 1kΩ to 10kΩ. A higher value can help reduce EMI, but may slow down the switching speed.

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