NTMT0 Model Download Search Results
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NTMT061N60S5H
onsemi
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1 | 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 73.6 nC); Typ. RDS(on) = 48.8 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.61 Ω | Other | NTMT061N60S5H |
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NTMT045N065SC1
onsemi
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1 | Low Effective Output Capacitance (Coss = 162 pF); Zero reverse recovery current of body diode; Max Junction Temperature 175°C; Typ. RDS(on) = 33 mΩ @ Vgs : 18V Low conduction loss; Leadless thin SMD package; Kelvin Source Configuration; Ultra Low Gate Charge (Qg(tot) = 105 nC); 650V rated; 100% Avalanche Tested; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.1 Ω | Other | NTMT045N065SC1 |
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NTMT080N60S5
onsemi
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1 | 650V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 56.2 nC); Typ. RDS(on) = 64 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 5.66 Ω | Other | NTMT080N60S5 |
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NTMT064N65S3H
onsemi
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1 | 700V @ TJ = 150C; Leadless Ultra-thin SMD package; Kelvin Source Configuration; Ulta Low Gate Charge (Typ. Qg = 77 nC); Typ. RDS(on) = 56 mohm; 100% Avalanche Tested; RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 0.7 Ω | Other | NTMT064N65S3H |
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NTMT061N60S5F
onsemi
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1 | 650 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 76 nC); Low Energy Related Output Capacitance (Typ. Coss(er.) = 103 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 48.8 mΩ; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | NTMT061N60S5F |
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NTMT095N65S3H
onsemi
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1 | 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.2 Ω; 700 V @ TJ = 150°C; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 77 m Ω | NTMT095N65S3H |
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NTMT090N65S3HF
onsemi
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1 | 700 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 66 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 75 mΩ; 100% Avalanche Tested; RoHS Compliant | NTMT090N65S3HF |
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NTMT045N60S5F
onsemi
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1 | Power Field-Effect Transistor | NTMT045N60S5F |
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