Part Image

NTMT095N65S3H - onsemi

Description: 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 1.2 Ω; 700 V @ TJ = 150°C; Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 58 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 77 m Ω

Download NTMT095N65S3H Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
NTMT095N65S3H - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

NTMT095N65S3H Details

  • Manufacturer Part Number:

    NTMT095N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    TDFN-8

  • Manufacturer Package Code:

    520AB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    284 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    84 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMT095N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Also, ensure proper thermal design, including heat sinking and airflow, to keep the device within the specified temperature range.
  • The NTMT095N65S3H has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Additionally, consider adding external ESD protection devices, such as TVS diodes, to protect the device from external ESD events.
  • Yes, the NTMT095N65S3H is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is used within the specified temperature range and other environmental conditions.
  • The optimal gate resistor value depends on the specific application, including the switching frequency, voltage, and current. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or seek guidance from onsemi's technical support team for specific guidance.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

NTMT095N65S3H Overview

Use the download button to access the NTMT095N65S3H 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMT0, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMT095N65S3H

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview