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NTMT061N60S5F - onsemi

Description: 650 V @ TJ = 150 °C; Excellent body diode performance (low Qrr, robust body diode); Ultra Low Gate Charge (Typ. Qg = 76 nC); Low Energy Related Output Capacitance (Typ. Coss(er.) = 103 pF); Leadless Ultra-thin SMD package; Kelvin Source Configuration; Optimized Capacitance; Moisture Sensitivity Level 1 guarantee; Typ. RDS(on) = 48.8 mΩ; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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NTMT061N60S5F Details

  • Manufacturer Part Number:

    NTMT061N60S5F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TDFN4 8.00x8.00x1.00, 2.00P

  • Package Description:

    TDFN-4

  • Manufacturer Package Code:

    520AB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    376 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.061 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PSSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Pulsed Drain Current-Max (IDM):

    146 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMT061N60S5F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly cooled. The maximum junction temperature (Tj) should not exceed 150°C.
  • The recommended gate drive voltage for the NTMT061N60S5F is between 10V to 15V, and the recommended gate drive current is around 1A to 2A. However, the exact values may vary depending on the specific application and switching frequency.
  • To protect the device from ESD, it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and bags. The device should also be soldered into the PCB using an ESD-safe soldering iron and process.
  • The recommended operating frequency range for the NTMT061N60S5F is up to 100 kHz, although it can be operated at higher frequencies with proper design and layout considerations.

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NTMT061N60S5F Overview

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