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NTMTSC4D3N15MC - onsemi

Description: Small Footprint (8x8 mm); Low RDS(on); Low QG and Capacitance; Wettable Flank Option; RoHS Compliant; Enhanced Dualcool exposed top Pad design

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PCB Footprints
NTMTSC4D3N15MC - onsemi PCB footprint - Other - Other - TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3 CASE 507AS ISSUE B
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3D Models
NTMTSC4D3N15MC - onsemi  - 3D model - Other - TDFNW8 8.3x8.4, 2P, DUAL COOL, OPTION 3 CASE 507AS ISSUE B
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NTMTSC4D3N15MC Details

  • Manufacturer Part Number:

    NTMTSC4D3N15MC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Package Description:

    QFN88, TDFNW-8

  • Manufacturer Package Code:

    507AS

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    354 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    174 A

  • Drain-source On Resistance-Max:

    0.00445 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12.5 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    293 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTMTSC4D3N15MC Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Use a heat sink or thermal interface material to maintain a safe junction temperature.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
  • Yes, the NTMTSC4D3N15MC is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with an ESD wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage.

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NTMTSC4D3N15MC Overview

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