Part Image

NTMYS2D4N04CTWG - onsemi

Description: Power MOSFET 40 V, 140 A, 2.3Ω Single N-Channel

Download NTMYS2D4N04CTWG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
NTMYS2D4N04CTWG - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

NTMYS2D4N04CTWG Details

  • Manufacturer Part Number:

    NTMYS2D4N04CTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    138 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    829 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMYS2D4N04CTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves applying a voltage source to the gate pin (Vgs) and ensuring the drain-source voltage (Vds) is within the specified range. Additionally, ensure the device is operated within the recommended temperature range.
  • During reliability testing, it's essential to monitor parameters such as drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and junction temperature (Tj). These parameters can help identify potential issues with the device, such as excessive voltage stress or thermal runaway.
  • To handle ESD protection, follow proper handling and storage procedures for the device. Use an ESD wrist strap or mat when handling the device, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from electrostatic discharge.
  • The recommended soldering conditions for the NTMYS2D4N04CTWG involve using a soldering iron with a temperature range of 250°C to 260°C, and a soldering time of 3-5 seconds. It's also essential to use a solder with a melting point above 217°C to ensure reliable connections.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

NTMYS2D4N04CTWG Overview

Use the download button to access the NTMYS2D4N04CTWG 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like NTMYS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTMYS2D4N04CTWG

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview