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NTMYS8D0N04CTWG - onsemi

Description: Power MOSFET 40 V, 49 A, 8.1Ω Single N-Channel

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NTMYS8D0N04CTWG Details

  • Manufacturer Part Number:

    NTMYS8D0N04CTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    LFPAK-4

  • Package Description:

    LFPAK-4

  • Manufacturer Package Code:

    760AB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    81 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0081 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    255 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTMYS8D0N04CTWG Frequently Asked Questions (FAQs)

  • A good PCB layout for the NTMYS8D0N04CTWG should include a large copper area for heat dissipation, with multiple vias connecting the top and bottom layers. The drain pad should be connected to a solid copper plane, and the source pins should be connected to a separate copper plane or a ground plane.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or a thermal interface material to improve heat dissipation. Ensure that the device is operated within the specified maximum junction temperature (Tj) of 150°C.
  • The NTMYS8D0N04CTWG has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NTMYS8D0N04CTWG is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the driver circuitry is capable of providing the required gate voltage and current.
  • When selecting a gate driver for the NTMYS8D0N04CTWG, consider the device's gate charge, threshold voltage, and required switching frequency. Choose a gate driver that can provide the necessary voltage and current to ensure reliable switching. Additionally, consider the driver's propagation delay, rise and fall times, and output impedance to ensure proper device operation.

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NTMYS8D0N04CTWG Overview

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