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NTP110N65S3HF - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 62 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 98 mΩ

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NTP110N65S3HF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD
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NTP110N65S3HF - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD
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NTP110N65S3HF Details

  • Manufacturer Part Number:

    NTP110N65S3HF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Date Of Intro:

    2018-12-04

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    380 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP110N65S3HF Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power dissipation ratings.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC to provide a high-current, low-impedance drive signal.
  • A good PCB layout should minimize thermal resistance by using a large copper area for the drain and source pins. Ensure good thermal conductivity by using a thermal pad or heat sink, and consider using thermal interface materials (TIMs) to reduce thermal resistance.
  • To prevent ESD damage, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, and follow proper assembly and handling procedures.
  • The reliability and lifespan of the NTP110N65S3HF depend on various factors, including operating conditions, temperature, and quality of the device. Onsemi provides reliability data in the datasheet, but it's essential to consider the specific application and environmental conditions when estimating the device's lifespan.

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