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NTP185N60S5H - onsemi

Description: Fast switching performance with robust body diode; Ultra Low Gate Charge (Typ. Qg = 25 nC); Low Time Related Output Capacitance (Typ. COSS(tr.) = 372 pF); 650 V @ TJ = 150°C; Typ. RDS(on) = 148 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω

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NTP185N60S5H Details

  • Manufacturer Part Number:

    NTP185N60S5H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    124 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    116 W

  • Pulsed Drain Current-Max (IDM):

    53 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP185N60S5H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 20mm x 20mm, and ensuring good thermal conductivity between the pad and the surrounding copper area. Additionally, it's recommended to use a minimum of 2oz copper thickness and to avoid placing any thermal vias under the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device. Additionally, it's recommended to derate the device's power handling capability at high temperatures to prevent thermal runaway.
  • Using a different gate driver than the one recommended in the datasheet may affect the device's performance, particularly in terms of switching speed and EMI. It's recommended to consult with the gate driver manufacturer to ensure compatibility and to perform thorough testing to validate the design.
  • The internal parasitic diode can be handled by using a suitable snubber circuit or by ensuring that the device is operated within its recommended switching frequency range. Additionally, it's recommended to use a gate driver with a built-in diode emulation feature to minimize the impact of the parasitic diode.
  • Operating the device at or near its maximum ratings can reduce its reliability and lifespan. It's recommended to derate the device's power handling capability and to ensure that it operates within its recommended safe operating area (SOA) to minimize the risk of premature failure.

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NTP185N60S5H Overview

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Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB