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NTP52N10 - onsemi

Description: MOSFET 100V 60A N-Channel

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PCB Footprints
NTP52N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_3
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3D Models
NTP52N10 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220_3
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NTP52N10 Details

  • Manufacturer Part Number:

    NTP52N10

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 221A-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    178 W

  • Pulsed Drain Current-Max (IDM):

    156 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP52N10 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTP52N10 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate (Vgs) and drain (Vds) pins. The recommended gate-source voltage (Vgs) is between 2V to 4V, and the drain-source voltage (Vds) should be within the specified range of 10V to 100V.
  • For optimal thermal performance, it's recommended to use a PCB with a thermal pad and a heat sink. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. Keep the PCB layout compact and avoid thermal vias under the device to minimize thermal resistance.
  • To protect the NTP52N10 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind. Use ESD-sensitive devices and components, and follow proper assembly and handling procedures.
  • The NTP52N10 is a reliable device with a typical lifespan of 10 to 15 years, depending on operating conditions and environmental factors. However, it's essential to follow proper design, assembly, and testing procedures to ensure the device meets its expected lifespan.

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NTP52N10 Overview

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