Part Image

NTP5860NG - onsemi

Description: Obsolete - Power MOSFET 60V 169A 3 mOhm Single N-Channel TO-220 Logic Level

Download NTP5860NG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTP5860NG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AF
click to zoom
3D Models
NTP5860NG - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AF
click to zoom

NTP5860NG Details

  • Manufacturer Part Number:

    NTP5860NG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221D-03

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    735 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    220 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Pulsed Drain Current-Max (IDM):

    660 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

NTP5860NG Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and to connect it to a thermal plane or a heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, thermal interface material, and a robust PCB design to minimize thermal resistance.
  • Critical parameters to monitor during operation include the input voltage, output voltage, output current, and junction temperature. Monitoring these parameters can help prevent damage, ensure reliable operation, and optimize system performance.
  • The NTP5860NG has built-in OVP and UVP features. However, it's recommended to add external protection circuits to ensure the device is protected from voltage transients and faults. This can include using voltage supervisors, TVS diodes, and fuses to prevent damage and ensure reliable operation.
  • The recommended input and output capacitors depend on the specific application and operating conditions. However, as a general guideline, use low-ESR capacitors with a minimum capacitance of 10uF for the input and 22uF for the output. The capacitor selection should also consider the voltage rating, ripple current, and temperature rating.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTP5860NG Overview

Use the download button to access the NTP5860NG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTP58, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTP5860NG

Showing 0 results

NTP5860NG Alternates

Showing results

Image Part Number Model
Part Image NTP5860NLG onsemi

Power Field-Effect Transistor, 130A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB