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NTP75N03L09 - onsemi

Description: Obsolete - Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK

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NTP75N03L09 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - NTP75N03L09
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NTP75N03L09 - onsemi  - 3D model - Transistor Outline, Vertical - NTP75N03L09
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NTP75N03L09 Details

  • Manufacturer Part Number:

    NTP75N03L09

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    225 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTP75N03L09 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Additionally, a thermal pad on the bottom of the device should be connected to a solid copper plane on the PCB.
  • To ensure proper biasing, make sure to follow the recommended operating conditions in the datasheet. This includes providing a stable input voltage within the recommended range, using a suitable gate driver, and ensuring the device is properly connected to the load. Additionally, consider using a gate resistor to prevent oscillations and ensure a clean gate signal.
  • Critical parameters to monitor during operation include the device temperature, drain-source voltage, gate-source voltage, and drain current. Monitoring these parameters can help prevent device failure due to overheating, overvoltage, or overcurrent. Consider using a thermocouple or thermal sensor to monitor temperature, and ensure the device is operated within the recommended safe operating area (SOA).
  • To handle ESD protection, follow proper handling and storage procedures to prevent electrostatic discharge. Use an ESD wrist strap or mat when handling the device, and ensure the device is stored in an ESD-protected package. Additionally, consider using ESD protection devices such as TVS diodes or ESD protection arrays on the PCB to protect the device from external ESD events.
  • Recommended soldering and assembly techniques include using a soldering iron with a temperature range of 250-260°C, and a solder with a melting point of 217-220°C. Use a soldering technique that minimizes the time the device is exposed to high temperatures, and avoid using excessive solder or flux. Additionally, ensure the device is properly cleaned and dried before assembly to prevent moisture-related issues.

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NTP75N03L09 Overview

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