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NTPF360N65S3H - onsemi

Description: 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 17.5 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 296 m Ω; Internal Gate Resistance: 0.9 Ω

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PCB Footprints
NTPF360N65S3H - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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3D Models
NTPF360N65S3H - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 FULLPAK CASE 221D-03
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NTPF360N65S3H Details

  • Manufacturer Part Number:

    NTPF360N65S3H

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220FP, 3 PIN

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTPF360N65S3H Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other side of the board. Additionally, keeping the PCB traces and components away from the device's thermal pad can help reduce thermal resistance.
  • To ensure the reliability of NTPF360N65S3H in high-temperature applications, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 175°C. Additionally, using a suitable heat sink, ensuring good thermal contact, and avoiding thermal shocks can help prevent device degradation.
  • The NTPF360N65S3H has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using ESD-safe materials, grounding personnel, and using ESD-protected workstations.
  • Yes, NTPF360N65S3H can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and oscillations.
  • The recommended gate drive voltage for NTPF360N65S3H is between 10V and 15V, and the recommended gate drive current is around 1A to 2A. However, the actual values may vary depending on the specific application and switching frequency.

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NTPF360N65S3H Overview

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