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NTPF600N80S3Z - onsemi

Description: RoHS Compliant; 100% Avalanche Tested; Internal Gate Resistance: 3.5 Ω; 900 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 15.5 nC); Low Stored Energy in Output Capacitance (Eoss = 1.74 µJ @ 400 V); Optimized Capacitance; ESD Improved Capability with Zener Diode; Typ. RDS(on) = 550 mΩ

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NTPF600N80S3Z Details

  • Manufacturer Part Number:

    NTPF600N80S3Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    221D-03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.4

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    21 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTPF600N80S3Z Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power handling capability at high temperatures is recommended.
  • The NTPF600N80S3Z has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
  • Yes, you can use multiple NTPF600N80S3Z devices in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal mismatch.
  • The recommended gate drive voltage for the NTPF600N80S3Z is 10-15V, and the recommended gate drive current is 1-2A. However, the actual gate drive requirements may vary depending on the specific application and switching frequency.

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NTPF600N80S3Z Overview

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