Part Image

NTTFD022N10C - onsemi

Description: Advance Package Technology in Small Footprint (3x3mm); Low RDS(on); Low Qg and Capacitance

Download NTTFD022N10C Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NTTFD022N10C - onsemi PCB footprint - Other - Other - WQFN12 3.3X3.3
click to zoom
3D Models
NTTFD022N10C - onsemi  - 3D model - Other - WQFN12 3.3X3.3
click to zoom

NTTFD022N10C Details

  • Manufacturer Part Number:

    NTTFD022N10C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Package Description:

    WQFN-12

  • Manufacturer Package Code:

    510CJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-06-08

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    39 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JESD-30 Code:

    S-PQCC-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    26 W

  • Pulsed Drain Current-Max (IDM):

    349 A

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFD022N10C Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • To protect the device from ESD, handle the device by the body or pins, use an ESD wrist strap or mat, and ensure that the PCB has ESD protection components such as TVS diodes or resistors. Also, follow proper soldering and assembly procedures to prevent ESD damage.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10Ω to 100Ω to ensure proper switching and minimize ringing. However, it's recommended to consult the application note or seek guidance from onsemi's technical support team for specific guidance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NTTFD022N10C Overview

Use the download button to access the NTTFD022N10C schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NTTFD, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NTTFD022N10C

Showing 0 results