SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
80 A
Drain-source On Resistance-Max:
0.0025 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
29 pF
JESD-30 Code:
S-PQCC-N8
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
8
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
CHIP CARRIER
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
26 W
Pulsed Drain Current-Max (IDM):
327 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - annealed
Terminal Form:
NO LEAD
Terminal Position:
QUAD
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
NTTFD2D8N03P1E Frequently Asked Questions (FAQs)
The maximum junction temperature for the NTTFD2D8N03P1E is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range, typically between 2V to 5V, and ensuring the drain-source voltage (Vds) is within the specified maximum rating.
For optimal thermal performance, it's recommended to use a multi-layer PCB with a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of less than 10°C/W is recommended.
To protect the NTTFD2D8N03P1E from ESD, follow proper handling and storage procedures. Use an anti-static wrist strap or mat when handling the device, and store the device in an anti-static bag or container. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
A gate driver IC with a high current capability (e.g., 1A to 2A) is recommended to ensure fast switching times and low power losses. The gate driver should be able to provide a voltage swing of at least 5V to 10V to fully enhance the device.
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NTTFD2D8N03P1E Overview
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