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NTTFD4D1N03P1E - onsemi

Description: Latest 30V Technology with Lower Figure-of-Merit; Power Clip package Technology; Small Footprint

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NTTFD4D1N03P1E - onsemi PCB footprint - Other - Other - WQFN12 3.3X3.3, 0.65P CASE 510CJ ISSUE O
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NTTFD4D1N03P1E - onsemi  - 3D model - Other - WQFN12 3.3X3.3, 0.65P CASE 510CJ ISSUE O
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NTTFD4D1N03P1E Details

  • Manufacturer Part Number:

    NTTFD4D1N03P1E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WQFN-12

  • Package Description:

    WQFN-12

  • Manufacturer Package Code:

    510CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    54 A

  • Drain-source On Resistance-Max:

    0.0054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    MO-220WEEC-1

  • JESD-30 Code:

    S-PQCC-N12

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    408 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFD4D1N03P1E Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a copper plane on the PCB, and using vias to dissipate heat to other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any gaps.
  • The NTTFD4D1N03P1E has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the NTTFD4D1N03P1E is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is qualified according to the relevant industry standards (e.g., AEC-Q101).
  • The recommended soldering conditions for the NTTFD4D1N03P1E involve using a soldering iron with a temperature of 260°C (500°F) for 10 seconds or less. Ensure that the device is not exposed to temperatures above 260°C (500°F) for an extended period.

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NTTFD4D1N03P1E Overview

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