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NTTFS002N04CLTAG - onsemi

Description: Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; RoHS Compliant

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PCB Footprints
NTTFS002N04CLTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3,0.65P CASE 511DY ISSUE A
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NTTFS002N04CLTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3,0.65P CASE 511DY ISSUE A
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NTTFS002N04CLTAG Details

  • Manufacturer Part Number:

    NTTFS002N04CLTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DY

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2019-01-30

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    268 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    28 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    85 W

  • Pulsed Drain Current-Max (IDM):

    706 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFS002N04CLTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves keeping the drain and source pins as close as possible to minimize inductance. A thermal pad on the bottom of the package should be connected to a copper plane on the PCB to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal management.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 4.5V to 10V, and the drain-source voltage (Vds) should be set within the recommended operating range. A gate driver or voltage regulator can be used to provide a stable bias voltage.
  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating or damage. The maximum junction temperature is 150°C, and the device should be operated within the recommended safe operating area (SOA).
  • Yes, the NTTFS002N04CLTAG is sensitive to electrostatic discharge (ESD). Handle the device with ESD-protective equipment, such as wrist straps, mats, and bags. Follow proper assembly and handling procedures to prevent ESD damage.
  • Store the devices in their original packaging or in a dry, nitrogen-filled environment. Avoid exposing the devices to moisture or high humidity. Follow the recommended moisture sensitivity level (MSL) rating and baking procedures to prevent damage.

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NTTFS002N04CLTAG Overview

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