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NTTFS008N04CTAG - onsemi

Description: Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; RoHS Compliant

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PCB Footprints
NTTFS008N04CTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB
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NTTFS008N04CTAG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB
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NTTFS008N04CTAG Details

  • Manufacturer Part Number:

    NTTFS008N04CTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-01-24

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    193 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTTFS008N04CTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves keeping the drain and source pins as close as possible to minimize inductance. A thermal pad on the bottom of the package should be connected to a copper plane on the PCB to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal management.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 4.5V and 10V, and the drain-source voltage (Vds) should be set between 0V and 30V. The device should also be operated within the recommended temperature range of -55°C to 150°C.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. It's essential to ensure proper thermal management and design margins to prevent overheating.
  • The NTTFS008N04CTAG has an integrated ESD protection diode, but additional external protection measures may be necessary depending on the application. It's recommended to follow proper ESD handling procedures during assembly and testing, and to consider adding external ESD protection devices if necessary.
  • Onsemi provides reliability data and quality metrics for the NTTFS008N04CTAG, including FIT rates, MTBF, and failure rates. These metrics can be found in the device's reliability report or by contacting onsemi's support team.

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NTTFS008N04CTAG Overview

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