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NTTFS012N10MDTAG - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 14.4 mΩ at VGS = 10 V, ID = 15 A ; Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 7.5 A ; 50% lower Qrr than other MOSFET suppliers ; Lowers switching noise/EMI; 100% UIL tested ; RoHS Compliant ; Very Low RDS*Qoss

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NTTFS012N10MDTAG - onsemi PCB footprint - Other - Other - NTTFS012N10MDTAG-2
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NTTFS012N10MDTAG - onsemi  - 3D model - Other - NTTFS012N10MDTAG-2
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NTTFS012N10MDTAG Details

  • Manufacturer Part Number:

    NTTFS012N10MDTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511DY

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    121 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.0144 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8.4 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    217 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFS012N10MDTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves keeping the drain and source pins as close as possible to minimize inductance. A thermal pad on the bottom of the package should be connected to a copper plane on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended for the PCB.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be set between 4.5V to 10V, and the drain-source voltage (Vds) should be set between 10V to 30V. The device should be operated within the safe operating area (SOA) to prevent damage.
  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating, overvoltage, and overcurrent conditions. Ensure the device operates within the specified ratings and derating curves.
  • The gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω to 100Ω. A lower value can improve switching speed but increases power consumption, while a higher value reduces power consumption but slows down switching speed.
  • The NTTFS012N10MDTAG has an ESD rating of HBM 2kV and CDM 1kV. Handle the device with ESD-protective equipment, such as wrist straps and mats, and avoid touching the pins or exposing the device to static electricity.

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NTTFS012N10MDTAG Overview

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