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NTTFS015N04CTAG - onsemi

Description: Small Footprint (3x3 mm); Low On-Resistance; Low Capacitance; NTTFS5C453NLWF − Wettable Flanks Product; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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Symbol
NTTFS015N04CTAG - onsemi - PCB symbol
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PCB Footprints
NTTFS015N04CTAG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_3
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3D Models
NTTFS015N04CTAG - onsemi - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_3
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NTTFS015N04CTAG Details

  • Manufacturer Part Number:

    NTTFS015N04CTAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8 / u8FL

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2019-01-24

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.0173 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    23 W

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NTTFS015N04CTAG Frequently Asked Questions (FAQs)

  • The recommended PCB layout involves placing the device on a 2-layer or 4-layer board with a solid ground plane, and using thermal vias to dissipate heat. A heat sink or thermal pad can also be used to improve thermal management. Consult the onsemi application note AN11158 for more details.
  • The NTTFS015N04CTAG requires a bias voltage of 5V to 15V, and a bias current of 1mA to 10mA. Ensure the bias voltage is stable and noise-free, and use a suitable bias resistor to limit the current. Consult the datasheet for specific biasing requirements.
  • The NTTFS015N04CTAG is designed to operate up to 1 GHz, but the actual operating frequency may be limited by the specific application and PCB layout. Consult the datasheet and onsemi application notes for more information.
  • The NTTFS015N04CTAG has built-in ESD protection, but additional protection measures may be necessary depending on the application. Use ESD-sensitive handling procedures, and consider adding external ESD protection devices or circuits to ensure device reliability.
  • The NTTFS015N04CTAG is designed to meet the reliability and lifetime expectations of automotive and industrial applications. The device is qualified to AEC-Q101 and is expected to operate for 10 years or more in typical applications. Consult the datasheet and onsemi reliability reports for more information.

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NTTFS015N04CTAG Overview

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