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NTTFS2D1N04HLTWG - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID =23 A ; Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18A ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant

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PCB Footprints
NTTFS2D1N04HLTWG - onsemi PCB footprint - Other - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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3D Models
NTTFS2D1N04HLTWG - onsemi  - 3D model - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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NTTFS2D1N04HLTWG Details

  • Manufacturer Part Number:

    NTTFS2D1N04HLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    126 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    150 A

  • Drain-source On Resistance-Max:

    0.0021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    958 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFS2D1N04HLTWG Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the NTTFS2D1N04HLTWG is a standard SOT-23 package with a 1.3mm x 1.3mm pad size, and a thermal pad connected to the drain pin.
  • To ensure proper thermal management, use a thermal pad or heat sink with a thermal conductivity of at least 1 W/m-K, and ensure a good thermal interface between the device and the heat sink. Also, keep the device's junction temperature (Tj) below 150°C.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it between -5V and Vcc + 5V to prevent damage to the device.
  • Use ESD protection devices, such as TVS diodes or ESD suppressors, on the I/O lines, and handle the device by the body or use an anti-static wrist strap to prevent ESD damage.
  • The recommended operating frequency for the NTTFS2D1N04HLTWG is up to 1 MHz, but it can be used at higher frequencies with proper PCB design and layout considerations.

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NTTFS2D1N04HLTWG Overview

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