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NTTFS3D7N06HLTWG - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID =23 A ; Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 18A ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant ; Low Qg/Coss

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NTTFS3D7N06HLTWG - onsemi - PCB symbol
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PCB Footprints
NTTFS3D7N06HLTWG - onsemi PCB footprint - Other - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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3D Models
NTTFS3D7N06HLTWG - onsemi - 3D model - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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NTTFS3D7N06HLTWG Details

  • Manufacturer Part Number:

    NTTFS3D7N06HLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    103 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    11.7 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    658 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFS3D7N06HLTWG Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the MOSFET's voltage and current ratings. A general rule of thumb is to limit the voltage and current to 80% of the maximum ratings to ensure safe operation.
  • The RθJC can be calculated using the thermal resistance values provided in the datasheet. For the NTTFS3D7N06HLTWG, the RθJC is approximately 1.25°C/W. This value can be used to estimate the junction temperature (Tj) based on the case temperature (Tc) and power dissipation (Pd).
  • The recommended gate drive voltage for the NTTFS3D7N06HLTWG is between 10V and 15V. This ensures proper switching and minimizes power losses.
  • The internal diode can be handled by using a freewheeling diode (also known as a flyback diode) in parallel with the MOSFET. This diode helps to dissipate the energy stored in the inductive load during switching, reducing electromagnetic interference (EMI) and voltage spikes.
  • The maximum allowed dv/dt for the NTTFS3D7N06HLTWG is not explicitly stated in the datasheet. However, as a general guideline, it's recommended to limit the dv/dt to 1000 V/μs or less to prevent false triggering and ensure reliable operation.

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NTTFS3D7N06HLTWG Overview

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