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NTTFS5116PLTWG - onsemi

Description: Low RDS(on); Fast Switching; RoHS Compliant

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PCB Footprints
NTTFS5116PLTWG - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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3D Models
NTTFS5116PLTWG - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D_2
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NTTFS5116PLTWG Details

  • Manufacturer Part Number:

    NTTFS5116PLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN8 3.3x3.3, 0.65P

  • Package Description:

    WDFN8, 8 PIN

  • Pin Count:

    8

  • Manufacturer Package Code:

    511AB

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5.7 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    84 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTTFS5116PLTWG Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
  • The device has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the PCB is properly grounded.
  • Yes, the device is AEC-Q101 qualified and suitable for high-reliability and automotive applications. However, ensure you follow the recommended operating conditions and design guidelines to meet the required reliability standards.
  • Use a systematic approach to troubleshoot issues. Check the power supply, input/output connections, and PCB layout. Verify the device is operated within the recommended specifications and consider using a oscilloscope or logic analyzer to debug the issue.

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NTTFS5116PLTWG Overview

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Power Field-Effect Transistor, 5.7A I(D), 60V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET