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NTTFSSCH4D0N08XLTWG - onsemi

Description: Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm); Ultra Low RDS(on); Low QG and Capacitance

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PCB Footprints
NTTFSSCH4D0N08XLTWG - onsemi PCB footprint - Other - Other - WDFN9 3.30x3.30x0.58, 0.65P CASE 511BX ISSUE B
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3D Models
NTTFSSCH4D0N08XLTWG - onsemi  - 3D model - Other - WDFN9 3.30x3.30x0.58, 0.65P CASE 511BX ISSUE B
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NTTFSSCH4D0N08XLTWG Details

  • Manufacturer Part Number:

    NTTFSSCH4D0N08XLTWG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    WDFN-9

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    107 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    S-PTSO-N9

  • Number of Elements:

    1

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    102 W

  • Pulsed Drain Current-Max (IDM):

    419 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    TRIPLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NTTFSSCH4D0N08XLTWG Overview

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