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NTTFSSH0D7N02X - onsemi

Description: MOSFET - Power, Single N-Channel, Source Down 33, WDFN9 25 V, 0.58 m, 310 A

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PCB Footprints
NTTFSSH0D7N02X - onsemi PCB footprint - Other - Other - WDFN9 3.3x3.3, 0.65P CASE 511EB ISSUE B
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3D Models
NTTFSSH0D7N02X - onsemi  - 3D model - Other - WDFN9 3.3x3.3, 0.65P CASE 511EB ISSUE B
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NTTFSSH0D7N02X Details

  • Manufacturer Part Number:

    NTTFSSH0D7N02X

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    WDFN-9

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    192 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    310 A

  • Drain-source On Resistance-Max:

    0.00058 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    124 pF

  • JESD-30 Code:

    S-PTSO-N9

  • Number of Elements:

    1

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    87 W

  • Pulsed Drain Current-Max (IDM):

    1342 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    TRIPLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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NTTFSSH0D7N02X Overview

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