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NTTFSSH1D3N04XL - onsemi

Description: Ultra Low Rds(on) to Improve System Efficiency; Low Qg and Capacitance to Minimize Driving and Switching Losses; Excellent Thermal Conduction by Advanced Source−Down Center Gate Package Technology (3.3x3.3mm); Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, 10min. dwell, 20℃/min, 6layers 2.35T; These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant

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PCB Footprints
NTTFSSH1D3N04XL - onsemi PCB footprint - Other - Other - WDFN9 3.3x3.3, 0.65P CASE 511EB ISSUE B
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3D Models
NTTFSSH1D3N04XL - onsemi  - 3D model - Other - WDFN9 3.3x3.3, 0.65P CASE 511EB ISSUE B
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NTTFSSH1D3N04XL Details

  • Manufacturer Part Number:

    NTTFSSH1D3N04XL

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN9 3.3x3.3, 0.65P

  • Manufacturer Package Code:

    511EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    135 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    207 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    32 pF

  • JESD-30 Code:

    S-PTSO-N9

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    107 W

  • Pulsed Drain Current-Max (IDM):

    812 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    TRIPLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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