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NTY100N10G - onsemi

Description: Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

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PCB Footprints
NTY100N10G - onsemi PCB footprint - Other - Other - TO−3BPL (TO−264) CASE 340G−02 ISSUE J_2025
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3D Models
NTY100N10G - onsemi  - 3D model - Other - TO−3BPL (TO−264) CASE 340G−02 ISSUE J_2025
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NTY100N10G Details

  • Manufacturer Part Number:

    NTY100N10G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3PBL (TO-264)

  • Package Description:

    TO-3BPL, TO-264, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340G-02

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    123 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    540 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    313 W

  • Pulsed Drain Current-Max (IDM):

    369 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTY100N10G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a thermal relief pattern on the top layer, and a solid copper pour on the bottom layer connected to the drain pin. This helps to dissipate heat efficiently.
  • To ensure proper biasing, make sure to follow the recommended operating conditions in the datasheet. This includes setting the gate-source voltage (Vgs) between 2V to 5V, and the drain-source voltage (Vds) between 10V to 100V. Additionally, ensure the device is operated within the recommended temperature range of -55°C to 150°C.
  • The maximum allowable power dissipation for the NTY100N10G is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 125W at a case temperature of 25°C. However, this value can be derated based on the ambient temperature and thermal resistance.
  • Yes, the NTY100N10G can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly biased and driven to minimize switching losses. Additionally, consider the PCB layout and parasitic inductances to minimize ringing and oscillations.
  • To protect the NTY100N10G from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store the device in an ESD-protected package. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design.

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NTY100N10G Overview

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