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NTZD3154NT1G - onsemi

Description: Low RDS(on) Improving System Efficiency; Low Threshold Voltage; Small Footprint 1.6 x 1.6 mm; ESD Protected Gate; RoHS Compliant

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NTZD3154NT1G - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NTZD3154NT1G - onsemi  - 3D model - SO Transistor Flat Lead - SOT-563 6 LEAD CASE 463A-01 ISSUE O
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NTZD3154NT1G Details

  • Manufacturer Part Number:

    NTZD3154NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-563, 6 LEAD

  • Pin Count:

    6

  • Manufacturer Package Code:

    463A-01

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.54 A

  • Drain-source On Resistance-Max:

    0.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTZD3154NT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system accordingly.
  • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. For input capacitors, use 10uF to 22uF, and for output capacitors, use 10uF to 47uF.
  • Implement overvoltage protection (OVP) and undervoltage protection (UVP) circuits using zener diodes, TVS diodes, or dedicated OVP/UVP ICs. Ensure the protection circuits can handle the maximum input voltage and current.
  • Apply the input voltage first, followed by the enable signal. Ensure the input voltage is stable before applying the enable signal. A soft-start circuit can be used to reduce inrush current.

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Sponsored

NTZD3154NT1G Overview

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Part Image NTZD3154NT2G onsemi

Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTZD3154NT2G Rochester Electronics LLC

540mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1.60 X 1.60 MM, LEAD FREE, CASE 463A-01, 6 PIN

Part Image NTZD3154NT1G Rochester Electronics LLC

540mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1.60 X 1.60 MM, LEAD FREE, CASE 463A-01, 6 PIN

Part Image NTZD3154NT5H onsemi

Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTZD3154NT2H onsemi

Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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