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NV25080MUW3VTBG - onsemi

Description: Automotive Temperature Grade 1 (-40°C to +125°C); 2.5 V to 5.5 V Supply Voltage Range; Wettable Flank UDFN Package Supports Auto-Optical Inspection; 10 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 32-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; CAV Prefix for Automotive and Other Applications Requiring Site and Change Control; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; 100 Year Data Retention;

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PCB Footprints
NV25080MUW3VTBG - onsemi PCB footprint - Small Outline No-lead - Small Outline No-lead - CASE 517DH
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3D Models
NV25080MUW3VTBG - onsemi  - 3D model - Small Outline No-lead - CASE 517DH
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NV25080MUW3VTBG Details

  • Manufacturer Part Number:

    NV25080MUW3VTBG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    UDFN-8

  • Package Description:

    UDFN-8

  • Manufacturer Package Code:

    517DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    IT ALSO OPERATES AT 1.8 TO 5.5 V SUPPLY VOLTAGE AT 5 MHZ FREQUENCY

  • Clock Frequency-Max (fCLK):

    10 MHz

  • Data Retention Time-Min:

    100

  • Endurance:

    1000000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Memory Density:

    8192 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    1024 words

  • Number of Words Code:

    1000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    1KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.11,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    5 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    0.55 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.000002 A

  • Supply Current-Max:

    0.003 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

  • Write Cycle Time-Max (tWC):

    5 ms

  • Write Protection:

    HARDWARE/SOFTWARE

NV25080MUW3VTBG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NV25080MUW3VTBG is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and a gate current (Ig) sufficient to charge the gate capacitance quickly.
  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching times, but may increase power losses.
  • Yes, the NV25080MUW3VTBG is suitable for high-frequency switching applications up to several hundred kHz, thanks to its low gate charge (Qg) and internal gate resistance (Rg). However, ensure proper thermal management and consider the effects of switching losses.
  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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