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NV25160DWHFT3G - onsemi

Description: Automotive Temperatures Grade0: -40°C to +150°C/VCC = 2.5 V to 5.5 V; SOIC and TSSOP 8−pad Packages; 20/ 10 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 32-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 200 Year Data Retention; Additional Identification Page with Permanent Write Protection; NV Prefix for Automotive and Other Applications Requiring Site and Change Control; Program/Erase

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NV25160DWHFT3G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - 8-Pin SOIC
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NV25160DWHFT3G - onsemi  - 3D model - Small Outline Packages - 8-Pin SOIC
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NV25160DWHFT3G Details

  • Manufacturer Part Number:

    NV25160DWHFT3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOIC-8

  • Manufacturer Package Code:

    751BD

  • Country Of Origin:

    Philippines

  • ECCN Code:

    3A001.a.2.a

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Clock Frequency-Max (fCLK):

    10 MHz

  • Data Retention Time-Min:

    200

  • Endurance:

    300000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    4.9 mm

  • Memory Density:

    16384 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    2048 words

  • Number of Words Code:

    2000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    5 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.75 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00001 A

  • Supply Current-Max:

    0.002 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3.9 mm

  • Write Cycle Time-Max (tWC):

    4 ms

  • Write Protection:

    HARDWARE/SOFTWARE

NV25160DWHFT3G Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal thermal resistance, use thermal vias, and keep high-current paths short. A heat sink or thermal pad can be used to dissipate heat. Refer to onsemi's application notes and thermal management guidelines for more information.
  • Choose input capacitors with low ESR, high ripple current rating, and a voltage rating above the maximum input voltage. Output capacitors should have low ESR, high ripple current rating, and a voltage rating above the output voltage. Consult onsemi's capacitor selection guidelines and application notes for specific recommendations.
  • The soft-start time should be set based on the system's startup requirements, typically between 1-10 ms. Tracking settings depend on the specific application, but a typical setting is to track the input voltage with a ratio of 0.5-0.8. Consult onsemi's application notes and datasheet for more information.
  • Use the OCP (Overcurrent Protection) pin to detect overcurrent conditions. Implement a fault detection circuit to monitor the OCP pin and respond to faults by shutting down the device or triggering an alarm. Consult onsemi's application notes and datasheet for more information.
  • The thermal shutdown temperature is typically set to 150°C, with a hysteresis of 10-20°C. These settings can be adjusted based on the specific application requirements. Consult onsemi's application notes and datasheet for more information.

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