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NV25256MUW3VTBG - onsemi

Description: Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified • 10 MHz (5 V) SPI Compatible • 1.8 V to 5.5 V Supply Voltage Range • SPI Modes (0,0) & (1,1) • 64−byte Page Write Buffer • Additional Identification Page with Permanent Write Protection • Self−timed Write Cycle • Hardware and Software Protection • Block Write Protection − Protect 1/4, 1/2 or Entire EEPROM Array • Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention • 8−pad Wettable Flank UDFN 2x3 mm Package

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PCB Footprints
NV25256MUW3VTBG - onsemi PCB footprint - Small Outline No-lead - Small Outline No-lead - UDFN8 2x3, 0.5P CASE 517DH ISSUE A
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3D Models
NV25256MUW3VTBG - onsemi  - 3D model - Small Outline No-lead - UDFN8 2x3, 0.5P CASE 517DH ISSUE A
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NV25256MUW3VTBG Details

  • Manufacturer Part Number:

    NV25256MUW3VTBG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    UDFN-8

  • Package Description:

    UDFN-8

  • Manufacturer Package Code:

    517DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2018-02-06

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Additional Feature:

    IT ALSO OPERATES AT FREQUENCY 5 MHZ AT 1.8 TO 5.5 V SUPPLY VOLTAGE

  • Clock Frequency-Max (fCLK):

    10 MHz

  • Data Retention Time-Min:

    200

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Memory Density:

    262144 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    32768 words

  • Number of Words Code:

    32000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    32KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HUSSON

  • Package Equivalence Code:

    SOLCC8,.11,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    5 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    0.55 mm

  • Standby Current-Max:

    0.000003 A

  • Supply Current-Max:

    0.003 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

  • Write Cycle Time-Max (tWC):

    5 ms

NV25256MUW3VTBG Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the NV25256MUW3VTBG is 10 MHz.
  • Yes, the NV25256MUW3VTBG is compatible with both 5V and 3.3V systems, making it a versatile option for various designs.
  • The NV25256MUW3VTBG can handle up to 1 million write cycles, ensuring reliable data storage over its lifespan.
  • The NV25256MUW3VTBG has a data retention period of at least 100 years, ensuring that stored data remains intact over an extended period.
  • Yes, the NV25256MUW3VTBG is available in various package options, including SOIC, TSSOP, and WLCSP, to accommodate different design requirements.

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NV25256MUW3VTBG Overview

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