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NV25512MUW3VTBG - onsemi

Description: Automotive Temperature Grade 1 (-40°C to +125°C); 1.8 V to 5.5 V Supply Voltage Range; Wettable Flank UDFN Package Supports Auto-Optical Inspection; 10 MHz SPI Compatible; SPI Modes (0,0) & (1,1); 128-byte Page Write Buffer; Self-timed Write Cycle; Hardware and Software Protection; NV Prefix for Automotive and Other Applications Requiring Site and Change Control; Block Write Protection - Protect ¼, ½ or Entire EEPROM Array; Low Power CMOS Technology; 1,000,000 Program/Erase Cycles; This Device is Pb-Free, H

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NV25512MUW3VTBG - onsemi PCB footprint - Small Outline No-lead - Small Outline No-lead - NV25512MUW3VTBG
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NV25512MUW3VTBG - onsemi  - 3D model - Small Outline No-lead - NV25512MUW3VTBG
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NV25512MUW3VTBG Details

  • Manufacturer Part Number:

    NV25512MUW3VTBG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    UDFN-8

  • Package Description:

    UDFN-8

  • Manufacturer Package Code:

    517DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Clock Frequency-Max (fCLK):

    10 MHz

  • Data Retention Time-Min:

    200

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    3 mm

  • Memory Density:

    524288 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    65536 words

  • Number of Words Code:

    64000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64KX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HUSSON

  • Package Equivalence Code:

    SOLCC8,.11,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    5 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    0.55 mm

  • Standby Current-Max:

    0.000003 A

  • Supply Current-Max:

    0.003 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    2 mm

  • Write Cycle Time-Max (tWC):

    4 ms

NV25512MUW3VTBG Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a 2-layer or 4-layer board with a solid ground plane, placing thermal vias under the device, and using a thermal pad on the bottom of the package. A minimum of 2 oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a heat sink if necessary, and ensure proper airflow. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • The NV25512MUW3VTBG has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2 kV and a charged device model (CDM) of 1 kV are recommended.
  • Yes, the NV25512MUW3VTBG is AEC-Q100 qualified, making it suitable for automotive applications. However, it's essential to ensure that the device is used within its specified operating conditions and that the system design meets the required automotive standards.
  • The recommended soldering profile for the NV25512MUW3VTBG involves a peak temperature of 260°C, with a dwell time of 30-60 seconds above 220°C. A soldering profile with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s is recommended.

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NV25512MUW3VTBG Overview

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