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NVATS5A112PLZT4G - onsemi

Description: Obsolete - P-Channel Power MOSFET, -60V, -80A, 13mΩ

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NVATS5A112PLZT4G - onsemi PCB footprint - Other - Other - NVATS5A112PLZT4G-1
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NVATS5A112PLZT4G - onsemi  - 3D model - Other - NVATS5A112PLZT4G-1
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NVATS5A112PLZT4G Details

  • Manufacturer Part Number:

    NVATS5A112PLZT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (Single Gauge) / ATPAK

  • Package Description:

    ATPAK-3/2

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    27 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    81 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVATS5A112PLZT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal management, use a heat sink if necessary, and follow the recommended operating conditions and derating guidelines in the datasheet.
  • The device has built-in ESD protection diodes, but additional external protection may be necessary depending on the application. Follow proper PCB design and handling practices to prevent latch-up.
  • Yes, the NVATS5A112PLZT4G is AEC-Q101 qualified and suitable for high-reliability and automotive applications, but ensure compliance with specific industry standards and regulations.
  • Consult the datasheet and application notes, perform thorough debugging, and contact onsemi support if necessary. Ensure proper device handling, storage, and operation within recommended conditions.

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NVATS5A112PLZT4G Overview

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