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NVATS5A114PLZT4G - onsemi

Description: MOSFET PCH 4V DRIVE SERIES

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NVATS5A114PLZT4G - onsemi - PCB symbol
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NVATS5A114PLZT4G - onsemi PCB footprint - Other - Other - NVATS5A114PLZT4G-1
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NVATS5A114PLZT4G - onsemi - 3D model - Other - NVATS5A114PLZT4G-1
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NVATS5A114PLZT4G Details

  • Manufacturer Part Number:

    NVATS5A114PLZT4G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-24

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    72 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN BISMUTH

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVATS5A114PLZT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the component away from heat sources and ensure good airflow.
  • Use a heat sink, ensure good airflow, and consider derating the device's power handling at high temperatures. Also, follow the recommended PCB layout and thermal management guidelines.
  • The NVATS5A114PLZT4G has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use. For latch-up prevention, ensure that the device is operated within the recommended voltage and current ranges.
  • Yes, the NVATS5A114PLZT4G is AEC-Q101 qualified and suitable for automotive and high-reliability applications. However, ensure that you follow the recommended operating conditions, and consult with onsemi's application engineers for specific requirements.
  • Follow the recommended soldering temperature profile and handling procedures to prevent damage. Use a solder with a melting point below 260°C, and ensure that the device is properly cleaned and dried after assembly.

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NVATS5A114PLZT4G Overview

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