Part Image

NVATS5A114PLZT4G - onsemi

Description: MOSFET PCH 4V DRIVE SERIES

Download NVATS5A114PLZT4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVATS5A114PLZT4G - onsemi PCB footprint - Other - Other - NVATS5A114PLZT4G-1
click to zoom
3D Models
NVATS5A114PLZT4G - onsemi  - 3D model - Other - NVATS5A114PLZT4G-1
click to zoom

NVATS5A114PLZT4G Details

  • Manufacturer Part Number:

    NVATS5A114PLZT4G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-08-24

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    72 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN BISMUTH

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVATS5A114PLZT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the component away from heat sources and ensure good airflow.
  • Use a heat sink, ensure good airflow, and consider derating the device's power handling at high temperatures. Also, follow the recommended PCB layout and thermal management guidelines.
  • The NVATS5A114PLZT4G has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use. For latch-up prevention, ensure that the device is operated within the recommended voltage and current ranges.
  • Yes, the NVATS5A114PLZT4G is AEC-Q101 qualified and suitable for automotive and high-reliability applications. However, ensure that you follow the recommended operating conditions, and consult with onsemi's application engineers for specific requirements.
  • Follow the recommended soldering temperature profile and handling procedures to prevent damage. Use a solder with a melting point below 260°C, and ensure that the device is properly cleaned and dried after assembly.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVATS5A114PLZT4G Overview

Use the download button to access the NVATS5A114PLZT4G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVATS, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVATS5A114PLZT4G

Showing 0 results