NVATS5A304PLZT4G footprint, schematic symbol and 3D model by onsemi

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NVATS5A304PLZT4G - onsemi PCB footprint - Other - Other - NVATS5A304PLZT4G-1

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Datasheet Download Datasheet
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Part Number NVATS5A304PLZT4G
Manufacturer onsemi
Pin Count 3
Part Category MOSFET (P-Channel)
Package Category Other
Footprint Name Other - NVATS5A304PLZT4G-1
Released Date Nov 24, 2020
Last Modified Date Jun 22, 2023 10:55 AM UTC
Pinout / Pin List Click Here (Member Only)

NVATS5A304PLZT4G Details

Manufacturer Part Number:
NVATS5A304PLZT4G
Brand Name:
ON Semiconductor
Pbfree Code:
Yes
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Manufacturer Package Code:
369AM
ECCN Code:
EAR99
Factory Lead Time:
4 Weeks
Date Of Intro:
2016-03-17
Manufacturer:
onsemi
YTEOL:
0
Avalanche Energy Rating (Eas):
656 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
60 V
Drain Current-Max (ID):
120 A
Drain-source On Resistance-Max:
0.0089 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e6
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Power Dissipation-Max (Abs):
108 W
Pulsed Drain Current-Max (IDM):
480 A
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
TIN BISMUTH
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

NVATS5A304PLZT4G Frequently Asked Questions (FAQs)

A thermal pad is recommended under the package to improve thermal performance. A minimum of 2 oz copper thickness and a thermal relief pattern is recommended. Refer to the onsemi application note AND8033/D for more details.
Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K to improve heat transfer between the device and the heat sink.
The ESD protection diodes are designed to protect the device from electrostatic discharge (ESD) events. They do not affect the device's performance under normal operating conditions, but they may introduce a small capacitance that can affect high-frequency performance.
Yes, the NVATS5A304PLZT4G can be used in switching regulator applications. However, ensure that the device is operated within the recommended switching frequency range and that the output voltage is within the recommended range to avoid overvoltage stress.
Follow the recommended power-up and power-down sequences outlined in the datasheet to ensure reliable operation and prevent latch-up. Ensure that the input voltage is stable and within the recommended range before applying power to the device.

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