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NVATS68301PZT4G - onsemi

Description: Low On-Resistance; High Current Capability; 100% Avalanche Tested; AEC-Q101 qualified and PPAP capable; RoHS compliance; ATPAK Package is Pin-Compatible with DPAK(TO-252)

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NVATS68301PZT4G - onsemi PCB footprint - Other - Other - DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O_1
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NVATS68301PZT4G - onsemi  - 3D model - Other - DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O_1
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NVATS68301PZT4G Details

  • Manufacturer Part Number:

    NVATS68301PZT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (Single Gauge) / ATPAK

  • Package Description:

    ATPAK-3/2

  • Manufacturer Package Code:

    369AM

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    54 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    124 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVATS68301PZT4G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation according to the temperature derating curve in the datasheet.
  • The NVATS68301PZT4G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is handled in a static-safe environment.
  • Yes, the NVATS68301PZT4G is AEC-Q100 qualified, making it suitable for automotive applications. However, ensure that the device is used within its specified operating conditions and that the system design meets the required automotive standards.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C, and the relative humidity should be below 60%.

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NVATS68301PZT4G Overview

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