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NVB125N65S3 - onsemi

Description: Best in Class body diode; Internal Rg; Low RDS (ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS; Internal Zener / 650V BVdss

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Symbol
NVB125N65S3 - onsemi - PCB symbol
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PCB Footprints
NVB125N65S3 - onsemi PCB footprint - Other - Other - D2PAK−3(TO−263, 3−LEAD)CASE 418AJ ISSUE F
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3D Models
NVB125N65S3 - onsemi - 3D model - Other - D2PAK−3(TO−263, 3−LEAD)CASE 418AJ ISSUE F
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NVB125N65S3 Details

  • Manufacturer Part Number:

    NVB125N65S3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    TO-263, D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    181 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVB125N65S3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, the device should be operated within the specified junction temperature (Tj) range of -55°C to 150°C.
  • The NVB125N65S3 has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. The device can withstand ESD pulses up to 2kV according to the Human Body Model (HBM) and 150V according to the Machine Model (MM).
  • Yes, the NVB125N65S3 is qualified for automotive and high-reliability applications. It meets the AEC-Q101 qualification standard and is PPAP (Production Part Approval Process) capable. However, it's essential to consult with onsemi's application engineers to ensure the device meets the specific requirements of your application.
  • The recommended gate drive circuits for the NVB125N65S3 involve using a gate driver IC with a suitable output current capability and a gate resistance (Rg) of 10-20 ohms. The gate drive voltage should be between 10-15V, and the gate drive circuit should be designed to minimize ringing and overshoot.

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NVB125N65S3 Overview

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