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NVB5860NLT4G - onsemi

Description: Obsolete - Power MOSFET 60V 220A 3 mOhm Single N-Channel D2PAK

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NVB5860NLT4G - onsemi PCB footprint - Other - Other - D2PAK 3 CASE  418B−04 ISSUE L
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NVB5860NLT4G Details

  • Manufacturer Part Number:

    NVB5860NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK 2 LEAD

  • Package Description:

    D2PAK-3/2

  • Pin Count:

    3

  • Manufacturer Package Code:

    418B-04

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    735 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    283 W

  • Pulsed Drain Current-Max (IDM):

    660 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVB5860NLT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device to facilitate heat dissipation.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Ensure the device is operated within the recommended junction temperature (TJ) range of -40°C to 150°C.
  • Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher for input and output capacitors. A minimum capacitance value of 4.7uF is recommended for input capacitors, and 10uF or higher for output capacitors.
  • Use a shielded enclosure, keep the device away from noise sources, and ensure proper PCB layout and routing. Implement EMI filters, such as common-mode chokes or ferrite beads, on input and output lines if necessary.
  • Apply the input voltage (VIN) first, followed by the enable signal (EN). Ensure the input voltage is stable before applying the enable signal. A soft-start circuit can be implemented to reduce inrush current during startup.

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NVB5860NLT4G Overview

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Part Image NTB5860NLT4G onsemi

Power Field-Effect Transistor, 130A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET