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NVBG020N120SC1 - onsemi

Description: 1200V rated; Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Qualified for Automotive According to AEC−Q101; Devices are RoHS Compliant

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PCB Footprints
NVBG020N120SC1 - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE A
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3D Models
NVBG020N120SC1 - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE A
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NVBG020N120SC1 Details

  • Manufacturer Part Number:

    NVBG020N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Date Of Intro:

    2020-06-24

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    264 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    98 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    468 W

  • Pulsed Drain Current-Max (IDM):

    392 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    67 ns

NVBG020N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NVBG020N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the device's power dissipation.
  • The recommended gate drive voltage for the NVBG020N120SC1 is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
  • Yes, the NVBG020N120SC1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowed dv/dt for the NVBG020N120SC1 is 10 kV/μs. Exceeding this limit may cause the device to malfunction or fail. Ensure that the device is properly snubbed and the circuit is designed to minimize voltage transients.

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