NVBG0 Model Download Search Results
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NVBG015N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVBG015N065SC1 |
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NVBG095N065SC1
onsemi
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1 | Low Output Capacitance (Coss = 89 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 70 mΩ; 650V rated; 100% UIL Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 7.6 Ω; High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 50 nC) | Other | NVBG095N065SC1 |
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NVBG080N120SC1
onsemi
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1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mΩ , 1200 V, M1, D2PAK−7L | Other | NVBG080N120SC1 |
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NVBG025N065SC1
onsemi
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1 | High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 164 nC); Low Output Capacitance (Coss = 278 pF); Zero reverse recovery current of body diode; 650V rated; 100% Avalanche Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 1.5 Ω | Other | NVBG025N065SC1 |
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NVBG095N65S3F
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS(ON) max. X Qg typ. & RDS(ON) max. X Eoss); Internal Zener / 650V BV dss | Other | NVBG095N65S3F |
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NVBG023N065M3S
onsemi
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1 | New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses; Qualified for Automotive According to AEC−Q101; 15V to 18V Gate Drive; D2PAK-7L Package; Devices are Pb−Free and are RoHS Compliant | Other | NVBG023N065M3S |
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NVBG020N120SC1
onsemi
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1 | 1200V rated; Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Qualified for Automotive According to AEC−Q101; Devices are RoHS Compliant | Other | NVBG020N120SC1 |
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NVBG020N090SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 900V rated; Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVBG020N090SC1 |
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NVBG070N120M3S
onsemi
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1 | Typical RDS(on) = 64.3mΩ at Vgs =18V, Id = 15A; Devices are Pb−Free and are RoHS Compliant; Qualified for Automotive According to AEC−Q101; New M3S technology: 64.3mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive | Other | NVBG070N120M3S |
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NVBG022N120M3S
onsemi
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1 | New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested; 15V to 18V Gate Drive; D2PAK-7L package for low common source inductance | Other | NVBG022N120M3S |
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NVBG060N065SC1
onsemi
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1 | High Junction Temperature (Tj = 175°C); Kelvin Source Configuration; Ultra Low Gate Charge (QG(tot) = 74 nC); Low Output Capacitance (Coss = 133 pF); Zero reverse recovery current of body diode; Typ. RDS(on) = 44 mΩ; 650V rated; 100% UIL Tested; Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Moisture Sensitivity Level 1 guarantee; Internal Gate Resistance: 3.9 Ω | Other | NVBG060N065SC1 |
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NVBG030N120M3S
onsemi
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 30 mohm, 1200 V, M3S, D2PAK-7L | Other | NVBG030N120M3S |
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NVBG040N120M3S
onsemi
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1 | Typical RDS(on) = 40mΩ at Vgs =18V, Id = 25A; Qualified for Automotive According to AEC−Q101; New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant | Other | NVBG040N120M3S |
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NVBG089N65S3F
onsemi
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1 | Low RDS (ON); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant | NVBG089N65S3F |
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NVBG032N065M3S
onsemi
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1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L | NVBG032N065M3S |
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NVBG075N065SC1
onsemi
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1 | Silicon Carbide (SiC) MOSFET - 56 mohm, 650 V, M2, D2PAK?7L | NVBG075N065SC1 |
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NVBG045N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 100% UIL Tested; 650V rated; High Speed Switching and Low Capacitance; Devices are RoHS Compliant; Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A | NVBG045N065SC1 |
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NVBG040N120SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 1200V rated; Max RDS(on) = 56 mΩ at Vgs = 20V, Id = 60A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | NVBG040N120SC1 |
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NVBG050N065SC1
onsemi
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1 | Power Field-Effect Transistor, 70.4A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263CB | NVBG050N065SC1 |
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NVBG082N65S3F
onsemi
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1 | Power Field-Effect Transistor, 65A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NVBG082N65S3F |
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NVBG060N090SC1
onsemi
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1 | Silicon Carbide (SiC) MOSFET, N‐ Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L | NVBG060N090SC1 |
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NVBG022N120M3S-IE
onsemi
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1 | N-Channel 1200 V 100A (Tc) 441W (Tc) Surface Mount D2PAK-7 | NVBG022N120M3S-IE |
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![Part Image](["https://componentsearchengine.com/Images/1/NVBG030N120M3S.JPG",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/17050855.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/NVBG060N090SC1.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/21407453.png",null,null])
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