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NVBG070N120M3S - onsemi

Description: Typical RDS(on) = 64.3mΩ at Vgs =18V, Id = 15A; Devices are Pb−Free and are RoHS Compliant; Qualified for Automotive According to AEC−Q101; New M3S technology: 64.3mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive

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PCB Footprints
NVBG070N120M3S - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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3D Models
NVBG070N120M3S - onsemi  - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NVBG070N120M3S Details

  • Manufacturer Part Number:

    NVBG070N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    172 W

  • Pulsed Drain Current-Max (IDM):

    93 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NVBG070N120M3S Frequently Asked Questions (FAQs)

  • The maximum allowed power cycle for the NVBG070N120M3S is 10^6 cycles, as specified in the onsemi application note AND9393/D.
  • Proper thermal management for the NVBG070N120M3S involves ensuring good heat sink contact, using thermal interface materials, and maintaining a maximum junction temperature of 150°C. Refer to the onsemi application note AND9393/D for more information.
  • The recommended gate resistor value for the NVBG070N120M3S is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. Consult the onsemi application note AND9393/D for more information.
  • Yes, the NVBG070N120M3S can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management. Consult the onsemi application note AND9393/D for more information.
  • The maximum allowed voltage transient for the NVBG070N120M3S is 120% of the maximum rated voltage, which is 1200V. However, it's recommended to limit the voltage transient to 10% of the maximum rated voltage to ensure reliable operation.

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