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NVBG060N090SC1 - onsemi

Description: Silicon Carbide (SiC) MOSFET, N‐ Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L

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NVBG060N090SC1 Details

  • Manufacturer Part Number:

    NVBG060N090SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    162 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.084 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    211 W

  • Pulsed Drain Current-Max (IDM):

    176 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    94 ns

  • Turn-on Time-Max (ton):

    106 ns

NVBG060N090SC1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would involve placing thermal vias under the device, using a solid ground plane, and keeping the copper traces wide and short. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal conductivity between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to fill any air gaps.
  • The maximum allowed voltage transient for the NVBG060N090SC1 is not explicitly stated in the datasheet. However, as a general rule, it's recommended to limit voltage transients to 10-20% of the maximum rated voltage to ensure reliable operation and prevent damage to the device.
  • Yes, you can use multiple NVBG060N090SC1 devices in parallel to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal differences between the devices.
  • The recommended gate drive voltage for the NVBG060N090SC1 is typically between 10-15V, and the recommended gate drive current is around 1-2A. However, the exact values may vary depending on the specific application and switching frequency.

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NVBG060N090SC1 Overview

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