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NVBG022N120M3S - onsemi

Description: New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses; 100% Avalanche Tested; 15V to 18V Gate Drive; D2PAK-7L package for low common source inductance

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PCB Footprints
NVBG022N120M3S - onsemi PCB footprint - Other - Other - NVBG022N120M3S-2
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NVBG022N120M3S - onsemi  - 3D model - Other - NVBG022N120M3S-2
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NVBG022N120M3S Details

  • Manufacturer Part Number:

    NVBG022N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Avalanche Energy Rating (Eas):

    267 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    234 W

  • Pulsed Drain Current-Max (IDM):

    159 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVBG022N120M3S Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid copper pour on the top and bottom layers, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities at high temperatures.
  • The recommended soldering conditions for the NVBG022N120M3S are: peak temperature of 260°C, soldering time of 10-30 seconds, and a soldering iron temperature of 350-370°C. It's also recommended to use a solder with a melting point above 217°C.
  • Yes, you can use multiple NVBG022N120M3S devices in parallel to increase power handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended gate drive voltage for the NVBG022N120M3S is 10-15V, and the recommended gate drive current is 1-2A. It's essential to use a suitable gate driver IC that can provide the required voltage and current.

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NVBG022N120M3S Overview

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