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NVBG040N120M3S - onsemi

Description: Typical RDS(on) = 40mΩ at Vgs =18V, Id = 25A; Qualified for Automotive According to AEC−Q101; New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant

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NVBG040N120M3S - onsemi - PCB symbol
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PCB Footprints
NVBG040N120M3S - onsemi PCB footprint - Other - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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3D Models
NVBG040N120M3S - onsemi - 3D model - Other - D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B
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NVBG040N120M3S Details

  • Manufacturer Part Number:

    NVBG040N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.8

  • Avalanche Energy Rating (Eas):

    143 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    263 W

  • Pulsed Drain Current-Max (IDM):

    149 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NVBG040N120M3S Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-ounce copper layer, with a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. This will help to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure proper airflow around the device. Additionally, consider derating the device's power handling capability at higher temperatures.
  • The recommended gate drive voltage for the NVBG040N120M3S is typically between 10-15V, with a current capability of up to 2A. However, the exact requirements may vary depending on the specific application and switching frequency.
  • To protect the device from overvoltage and overcurrent conditions, consider using a gate driver with built-in overcurrent protection, and add external protection components such as TVS diodes and fuses. Additionally, implement a robust overvoltage protection circuit to prevent damage from voltage spikes.
  • The recommended dead time for the NVBG040N120M3S in a half-bridge configuration is typically around 100-200ns, depending on the specific application and switching frequency. However, the exact dead time requirement may vary, and it's essential to consult the application notes and datasheet for more information.

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NVBG040N120M3S Overview

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