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NVBG160N120SC1 - onsemi

Description: Qualified for Automotive According to AEC−Q101; 1200V rated; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant

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NVBG160N120SC1 Details

  • Manufacturer Part Number:

    NVBG160N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK7 (TO-263-7L HV)

  • Package Description:

    D2PAK-7

  • Manufacturer Package Code:

    418BJ

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-02-25

  • Manufacturer:

    onsemi

  • YTEOL:

    6.7

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    19.5 A

  • Drain-source On Resistance-Max:

    0.224 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    42 ns

  • Turn-on Time-Max (ton):

    40 ns

NVBG160N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NVBG160N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling of the NVBG160N120SC1 is crucial to prevent overheating. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • The recommended gate drive voltage for the NVBG160N120SC1 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • Yes, the NVBG160N120SC1 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum dv/dt rating for the NVBG160N120SC1 is 10 kV/μs. Exceeding this rating can cause the device to fail or malfunction.

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