NVD4808NT4G - onsemi

Description: Low RDS(on) to Minimize Conduction Losses; Low Capacitance to Minimize Driver Losses; Optimized Gate Charge to Minimize Switching Losses

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Image	Part Number	Model
	NTD4808NT4G onsemi Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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NVD4808NT4G - onsemi

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Aluminium Electrolytic Capacitor

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