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NVF2955T1G - onsemi

Description: Design for low RDS(on); Withstands High Energy in Avalanche and Commutation Modes; RoHS Compliant; AEC−Q101 Qualified

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PCB Footprints
NVF2955T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04
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3D Models
NVF2955T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04
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NVF2955T1G Details

  • Manufacturer Part Number:

    NVF2955T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    225 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.3 W

  • Pulsed Drain Current-Max (IDM):

    17 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVF2955T1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVF2955T1G is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • For minimal EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding or filtering if necessary.
  • Yes, the NVF2955T1G is designed to handle high-voltage applications up to 55V. However, ensure that the device is properly biased and that the voltage ratings are not exceeded.
  • To troubleshoot issues, start by verifying the device's operating conditions, checking for proper biasing and voltage supply, and ensuring that the device is not overheating. If issues persist, consult the datasheet and application notes or contact onsemi support.

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NVF2955T1G Overview

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Part Image NTF2955T1G onsemi

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image NVF2955PT1G onsemi

Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA