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NVF6P02T3G - onsemi

Description: Low rDS(on); Logic Level Gate Drive; Diode Exhibits High Speed, Soft Recovery; Avalanche Energy Specified; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVF6P02T3G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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3D Models
NVF6P02T3G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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NVF6P02T3G Details

  • Manufacturer Part Number:

    NVF6P02T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    SOT-223, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    150 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    8.3 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVF6P02T3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVF6P02T3G is -40°C to 150°C.
  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a thermal interface material to improve heat dissipation.
  • The recommended PCB layout and thermal design for the NVF6P02T3G involves using a thermal pad, thermal vias, and a heat sink to dissipate heat efficiently. Consult the onsemi application note for detailed guidelines.
  • The NVF6P02T3G is rated for a maximum voltage of 20V. If your application requires higher voltages, consider using a different device or consulting with an onsemi application engineer.
  • The NVF6P02T3G has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing to prevent damage.

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NVF6P02T3G Overview

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